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ESNU06R07

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The ESNU06R07 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 54 to 70 A, Drain Source Resistance 5.3 to 7.0 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for ESNU06R07 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESNU06R07
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    60 V, 54 to 70 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    54 to 70 A
  • Drain Source Resistance
    5.3 to 7.0 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    90 nC
  • Switching Speed
    6 to 42 ns
  • Power Dissipation
    89 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 4153 pF

Technical Documents
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