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ESNU10R085

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The ESNU10R085 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 58 to 75 A, Drain Source Resistance 7.2 to 12 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.4 V. Tags: Through Hole. More details for ESNU10R085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESNU10R085
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    100 V, 58 to 75 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    58 to 75 A
  • Drain Source Resistance
    7.2 to 12 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.4 V
  • Gate Charge
    55 nC
  • Switching Speed
    13 to 60 ns
  • Power Dissipation
    87 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 3630 pF

Technical Documents
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