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ESPQ03R55

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The ESPQ03R55 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current -15 to -20 A, Drain Source Resistance 39 to 75 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.0 to -2.0 V. Tags: Surface Mount. More details for ESPQ03R55 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESPQ03R55
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    -30 V, -15 to -20 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -15 to -20 A
  • Drain Source Resistance
    39 to 75 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.0 to -2.0 V
  • Gate Charge
    9.2 to 11 nC
  • Switching Speed
    5.5 to 19 ns
  • Power Dissipation
    36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 520 pF

Technical Documents
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