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ESS8205

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The ESS8205 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 4.7 to 6.0 A, Drain Source Resistance 20 to 35 milli-ohm, Drain Source Breakdown Voltage 19 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.2 V. Tags: Surface Mount. More details for ESS8205 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESS8205
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    19 V, 4.7 to 6.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4.7 to 6.0 A
  • Drain Source Resistance
    20 to 35 milli-ohm
  • Drain Source Breakdown Voltage
    19 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.2 V
  • Gate Charge
    10 nC
  • Switching Speed
    10 to 35 ns
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 600 pF

Technical Documents
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