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ESS8810

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The ESS8810 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 7.4 to 9.5 A, Drain Source Resistance 11 to 20.5 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.5 to 0.9 V. Tags: Surface Mount. More details for ESS8810 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESS8810
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    20 V, 7.4 to 9.5 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    7.4 to 9.5 A
  • Drain Source Resistance
    11 to 20.5 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.5 to 0.9 V
  • Gate Charge
    15 nC
  • Switching Speed
    8 to 50 ns
  • Power Dissipation
    2.0 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 1150 pF

Technical Documents
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