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AUIRF7343Q

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AUIRF7343Q Image

The AUIRF7343Q from Infineon Technologies is a MOSFET with Continous Drain Current -3.4 to 4.7 V, Drain Source Resistance 0.043 to 0.170 Mohm, Drain Source Breakdown Voltage 55 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 V. Tags: Surface Mount. More details for AUIRF7343Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    AUIRF7343Q
  • Manufacturer
    Infineon Technologies
  • Description
    30-55 V Dual N and P-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3.4 to 4.7 V
  • Drain Source Resistance
    0.043 to 0.170 Mohm
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 V
  • Gate Charge
    24 to 38 nC
  • Power Dissipation
    1.3 to 2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Automotive

Technical Documents
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