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AUIRF7379Q

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AUIRF7379Q Image

The AUIRF7379Q from Infineon Technologies is a MOSFET with Continous Drain Current -4.3 to 5.8 V, Drain Source Resistance 0.038 to 0.180 Mohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for AUIRF7379Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    AUIRF7379Q
  • Manufacturer
    Infineon Technologies
  • Description
    30-55 V Dual N and P-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.3 to 5.8 V
  • Drain Source Resistance
    0.038 to 0.180 Mohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    25 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Automotive

Technical Documents
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