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BSC155N06ND

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The BSC155N06ND from Infineon Technologies is a MOSFET with Continous Drain Current 42 A, Drain Source Resistance 12.9 to 15.5 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for BSC155N06ND can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSC155N06ND
  • Manufacturer
    Infineon Technologies
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    42 A
  • Drain Source Resistance
    12.9 to 15.5 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    21 to 29 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8
  • Applications
    SMPS, Inductive wireless charging, Load switches, Battery management systems, LV drives

Technical Documents
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