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BSD235C H6327

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BSD235C H6327 Image

The BSD235C H6327 from Infineon Technologies is a MOSFET with Continous Drain Current -0.53 to 0.95 A, Drain Source Resistance 266 to 2100 milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to 1.2 V. Tags: Surface Mount. More details for BSD235C H6327 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSD235C H6327
  • Manufacturer
    Infineon Technologies
  • Description
    -20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.53 to 0.95 A
  • Drain Source Resistance
    266 to 2100 milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to 1.2 V
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-SOT363-6
  • Applications
    Automotive, DC-DC, Motor control, Onboard charger

Technical Documents
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