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BSG0811ND

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BSG0811ND Image

The BSG0811ND from Infineon Technologies is a MOSFET with Continous Drain Current 19 to 50 A, Drain Source Resistance 0.7 to 4 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for BSG0811ND can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSG0811ND
  • Manufacturer
    Infineon Technologies
  • Description
    25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    19 to 50 A
  • Drain Source Resistance
    0.7 to 4 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    5.6 to 29 nC
  • Power Dissipation
    2.5 to 6.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TISON-8
  • Applications
    Desktop and server, Single-phase & multiphase POL, CPU/GPU regulation in notebooks & DDR memory, High power density voltage regulator

Technical Documents
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