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BSO150N03MD G

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The BSO150N03MD G from Infineon Technologies is a MOSFET with Continous Drain Current 9.3 A, Drain Source Resistance 12.5 to 18.2 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for BSO150N03MD G can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSO150N03MD G
  • Manufacturer
    Infineon Technologies
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    9.3 A
  • Drain Source Resistance
    12.5 to 18.2 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    12 to 17 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-DSO-8
  • Applications
    Onboard charger, Notebook, Mainboard, DC-DC, VRD/VRM, Motor control, LED

Technical Documents
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