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BSO615N G

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The BSO615N G from Infineon Technologies is a MOSFET with Continous Drain Current 2.6 A, Drain Source Resistance 120 to 150 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for BSO615N G can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSO615N G
  • Manufacturer
    Infineon Technologies
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    2.6 A
  • Drain Source Resistance
    120 to 150 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    7 to 20 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-DSO-8
  • Applications
    Synchronous rectification, Solar micro inverter, Isolated DC-DC converters, Motor control for 12-48V systems, Or-ing switches

Technical Documents
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