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BSP603S2L

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The BSP603S2L from Infineon Technologies is a MOSFET with Continous Drain Current 4.1 to 5.2 A, Drain Source Resistance 23 to 40 Mohms, Drain Source Breakdown Voltage 55 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Through Hole. More details for BSP603S2L can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSP603S2L
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.1 to 5.2 A
  • Drain Source Resistance
    23 to 40 Mohms
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    31 to 42 nc
  • Power Dissipation
    1.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SOT-223
  • Applications
    Automotive

Technical Documents
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