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FF6MR12W2M1P_B11

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FF6MR12W2M1P_B11 Image

The FF6MR12W2M1P_B11 from Infineon Technologies is a MOSFET with Continous Drain Current 200 A, Drain Source Resistance 5.63 to 8.25 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 20 V, Gate Source Threshold Voltage 3.45 to 5.55 V. Tags: Chassis Mount. More details for FF6MR12W2M1P_B11 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF6MR12W2M1P_B11
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    200 A
  • Drain Source Resistance
    5.63 to 8.25 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 20 V
  • Gate Source Threshold Voltage
    3.45 to 5.55 V
  • Gate Charge
    496 nC
  • Power Dissipation
    0.02 W
  • Temperature operating range
    -40 to 150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Chassis Mount
  • Applications
    High Frequency Switching application, DC/DC converter, Solar applications, UPS system

Technical Documents
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