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IAUC120N04S6N008

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IAUC120N04S6N008 Image

The IAUC120N04S6N008 from Infineon Technologies is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 0.80 mO, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.6 V. Tags: Surface Mount. More details for IAUC120N04S6N008 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IAUC120N04S6N008
  • Manufacturer
    Infineon Technologies
  • Description
    40 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    0.80 mO
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.6 V
  • Gate Charge
    83 nC
  • Power Dissipation
    150 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Single SSO8
  • Applications
    Automotive

Technical Documents
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