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IAUC60N04S6L030H

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IAUC60N04S6L030H Image

The IAUC60N04S6L030H from Infineon Technologies is a MOSFET with Continous Drain Current 22 to 119 A, Drain Source Resistance 2.3 to 4.2 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for IAUC60N04S6L030H can be seen below.

Product Specifications

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Product Details

  • Part Number
    IAUC60N04S6L030H
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    22 to 119 A
  • Drain Source Resistance
    2.3 to 4.2 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    27 to 35 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8-56
  • Applications
    Automotive

Technical Documents
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