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IAUC60N04S6N050H

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The IAUC60N04S6N050H from Infineon Technologies is a MOSFET with Continous Drain Current 16 to 74 A, Drain Source Resistance 4 to 6.5 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.2 to 3 V. Tags: Surface Mount. More details for IAUC60N04S6N050H can be seen below.

Product Specifications

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Product Details

  • Part Number
    IAUC60N04S6N050H
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16 to 74 A
  • Drain Source Resistance
    4 to 6.5 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.2 to 3 V
  • Gate Charge
    13 to 17 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8-57
  • Applications
    Automotive

Technical Documents
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