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IAUC60N10S5L110

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IAUC60N10S5L110 Image

The IAUC60N10S5L110 from Infineon Technologies is a MOSFET with Continous Drain Current 42 to 60 A, Drain Source Resistance 10 to 15.3 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for IAUC60N10S5L110 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IAUC60N10S5L110
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    42 to 60 A
  • Drain Source Resistance
    10 to 15.3 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    18.5 to 24.1 nC
  • Power Dissipation
    88 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8-33
  • Applications
    Automotive

Technical Documents
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