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IAUS180N04S4N015

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IAUS180N04S4N015 Image

The IAUS180N04S4N015 from Infineon Technologies is a MOSFET with Continous Drain Current 169 to 180 A, Drain Source Resistance 1.2 to 1.5 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for IAUS180N04S4N015 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IAUS180N04S4N015
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    169 to 180 A
  • Drain Source Resistance
    1.2 to 1.5 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    103 o 134 nC
  • Power Dissipation
    166 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HSOG-8-1
  • Applications
    Automotive

Technical Documents
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