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IAUS200N08S5N023

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The IAUS200N08S5N023 from Infineon Technologies is a MOSFET with Continous Drain Current 148 to 200 A, Drain Source Resistance 1.8 to 3.7 Mohms, Drain Source Breakdown Voltage 80 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.2 to 3.8 V. Tags: Surface Mount. More details for IAUS200N08S5N023 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IAUS200N08S5N023
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    148 to 200 A
  • Drain Source Resistance
    1.8 to 3.7 Mohms
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.2 to 3.8 V
  • Gate Charge
    85 to 110 nC
  • Power Dissipation
    200 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HSOG-8-1
  • Applications
    Automotive

Technical Documents
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