The IAUS300N08S5N012T from Infineon Technologies is an N-Channel Enhancement Mode MOSFET that is specifically designed for automotive applications. It has a gate-source voltage of 20 V, drain-source voltage of 80 V, and a drain-source resistance of 1.4 milli-ohms. This AEC-Q101 qualified MOSFET has a drain current of 300 A and power consumption of up to 375 W. It has a gate charge of 178 nC and is available in a through-hole package.
