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IAUT165N08S5N029

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The IAUT165N08S5N029 from Infineon Technologies is a MOSFET with Continous Drain Current 120 to 165 A, Drain Source Resistance 2.4 to 4.4 Mohms, Drain Source Breakdown Voltage 80 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.2 to 3.8 V. Tags: Surface Mount. More details for IAUT165N08S5N029 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IAUT165N08S5N029
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 to 165 A
  • Drain Source Resistance
    2.4 to 4.4 Mohms
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.2 to 3.8 V
  • Gate Charge
    70 to 90 nC
  • Power Dissipation
    167 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    P/G-HSOF-8-1
  • Applications
    Automotive

Technical Documents
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