1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IAUT260N10S5N019

IAUT260N10S5N019

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IAUT260N10S5N019 Image

The IAUT260N10S5N019 from Infineon Technologies is a MOSFET with Continous Drain Current 197 to 260 A, Drain Source Resistance 1.6 to 2.5 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.2 to 3.8 V. Tags: Surface Mount. More details for IAUT260N10S5N019 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IAUT260N10S5N019
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    197 to 260 A
  • Drain Source Resistance
    1.6 to 2.5 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.2 to 3.8 V
  • Gate Charge
    128 to 166 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    P/G-HSOF-8-1
  • Applications
    Automotive

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products