The IMBF170R1K0M1 from Infineon Technologies is an N-Channel Enhancement Mode SiC MOSFET. It has a drain-source voltage of 1700 V with drain-source resistance of 1000 milliohms, and a gate threshold voltage of 4.5 V. This MOSFET has a continuous drain current of 5.2 A and a pulsed drain current of 13.3 A. It is based on a single-ended fly-back topology and offers high efficiency making it ideal for use in auxiliary power supplies. This RoHS compliant MOSFET has extremely low switching loss and a fully controllable dv/dt for EMI optimization. It is available in a surface-mount package and is ideal for energy storage systems, fast EV charging, industrial motor drives and controls, power management (SMPS) - reference design, and solutions for solar energy systems applications.