IMBF170R1K0M1

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IMBF170R1K0M1 Image

The IMBF170R1K0M1 from Infineon Technologies is an N-Channel Enhancement Mode SiC MOSFET. It has a drain-source voltage of 1700 V with drain-source resistance of 1000 milliohms, and a gate threshold voltage of 4.5 V. This MOSFET has a continuous drain current of 5.2 A and a pulsed drain current of 13.3 A. It is based on a single-ended fly-back topology and offers high efficiency making it ideal for use in auxiliary power supplies. This RoHS compliant MOSFET has extremely low switching loss and a fully controllable dv/dt for EMI optimization. It is available in a surface-mount package and is ideal for energy storage systems, fast EV charging, industrial motor drives and controls, power management (SMPS) - reference design, and solutions for solar energy systems applications.

Product Specifications

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Product Details

  • Part Number
    IMBF170R1K0M1
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V N-Channel Enhancement Mode SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.2 A
  • Drain Source Resistance
    1000 milliohms
  • Drain Source Breakdown Voltage
    1700 V
  • Gate Source Voltage
    -10 to 20 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    5 nC
  • Power Dissipation
    68 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO263-7
  • Applications
    Infrastructure – Charge o Charger, Industrial power supplies o Industrial UPS o Industrial SMPS, Energy generation o Solar string inverter and solar optimizer

Technical Documents

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