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IMBF170R650M1

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The IMBF170R650M1 from Infineon Technologies is a MOSFET with Continous Drain Current 7.4 A, Drain Source Resistance 650 to 1324 Milliohm, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -10 to 20 V, Gate Source Threshold Voltage 3.5 to 5.7 V. Tags: Surface Mount. More details for IMBF170R650M1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IMBF170R650M1
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.4 A
  • Drain Source Resistance
    650 to 1324 Milliohm
  • Drain Source Breakdown Voltage
    1700 V
  • Gate Source Voltage
    -10 to 20 V
  • Gate Source Threshold Voltage
    3.5 to 5.7 V
  • Gate Charge
    8 nC
  • Power Dissipation
    88 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO263-7
  • Applications
    Energy generation o Solar string inverter and solar optimizer, Industrial power supplies o Industrial UPS o Industrial SMPS, Infrastructure – Charge o Charger

Technical Documents
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