The IMBG65R048M1H from Infineon Technologies is a MOSFET with Continous Drain Current 45 A, Drain Source Resistance 48 to 67 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -2 to 20 V, Gate Source Threshold Voltage 3.5 to 5.7 V. Tags: Surface Mount. More details for IMBG65R048M1H can be seen below.