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IMBG65R260M1H

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IMBG65R260M1H Image

The IMBG65R260M1H from Infineon Technologies is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 260 to 364 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -2 to 20 V, Gate Source Threshold Voltage 3.5 to 5.7 V. Tags: Surface Mount. More details for IMBG65R260M1H can be seen below.

Product Specifications

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Product Details

  • Part Number
    IMBG65R260M1H
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    260 to 364 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -2 to 20 V
  • Gate Source Threshold Voltage
    3.5 to 5.7 V
  • Gate Charge
    6 nC
  • Power Dissipation
    65 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263-7
  • Applications
    Telecom and Server SMPS, UPS(uninterruptable power supplies), Solar PV inverters, Ev charging infrastructure, Energy storage and battery formation, Class D amplifiers

Technical Documents
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