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IMW120R350M1H

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IMW120R350M1H Image

The IMW120R350M1H from Infineon Technologies is a MOSFET with Continous Drain Current 4.7 A, Drain Source Resistance 350 to 662 Milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -7 to 23 V, Gate Source Threshold Voltage 3.5 to 5.7 V. Tags: Through Hole. More details for IMW120R350M1H can be seen below.

Product Specifications

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Product Details

  • Part Number
    IMW120R350M1H
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.7 A
  • Drain Source Resistance
    350 to 662 Milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -7 to 23 V
  • Gate Source Threshold Voltage
    3.5 to 5.7 V
  • Gate Charge
    5.3 nC
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO247-3
  • Applications
    Energy generation o Solar string inverter and solar optimizer, Industrial power supplies o Industrial UPS o Industrial SMPS, Infrastructure – Charge o Charger

Technical Documents
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