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IPB120N03S4L-03

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The IPB120N03S4L-03 from Infineon Technologies is a MOSFET with Continous Drain Current 88 to 120 A, Drain Source Resistance 2.6 to 5.1 Mohms, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1 to 2.2 V. Tags: Through Hole. More details for IPB120N03S4L-03 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB120N03S4L-03
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    88 to 120 A
  • Drain Source Resistance
    2.6 to 5.1 Mohms
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1 to 2.2 V
  • Gate Charge
    55 to 72 nC
  • Power Dissipation
    79 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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