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IPB120N08S4-04

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The IPB120N08S4-04 from Infineon Technologies is a MOSFET with Continous Drain Current 108 to 120 A, Drain Source Resistance 3.5 to 4.4 Mohms, Drain Source Breakdown Voltage 80 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IPB120N08S4-04 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB120N08S4-04
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    108 to 120 A
  • Drain Source Resistance
    3.5 to 4.4 Mohms
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    70 to 95 nC
  • Power Dissipation
    179 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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