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IPB180N04S4L-H0

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IPB180N04S4L-H0 Image

The IPB180N04S4L-H0 from Infineon Technologies is a MOSFET with Continous Drain Current 180 A, Drain Source Resistance 0.8 to 1.4 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Through Hole. More details for IPB180N04S4L-H0 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB180N04S4L-H0
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    180 A
  • Drain Source Resistance
    0.8 to 1.4 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    239 to 310 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-7-3
  • Applications
    Automotive

Technical Documents
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