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IPB180N06S4-H1

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The IPB180N06S4-H1 from Infineon Technologies is a MOSFET with Continous Drain Current 180 A, Drain Source Resistance 1.3 to 1.7 Mohms, Drain Source Breakdown Voltage 60 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IPB180N06S4-H1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB180N06S4-H1
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    180 A
  • Drain Source Resistance
    1.3 to 1.7 Mohms
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    208 to 270 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-7-3
  • Applications
    Automotive

Technical Documents
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