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IPB35N12S3L-26

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IPB35N12S3L-26 Image

The IPB35N12S3L-26 from Infineon Technologies is a MOSFET with Continous Drain Current 25 to 35 A, Drain Source Resistance 20.3 to 32.2 Mohms, Drain Source Breakdown Voltage 120 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2.4 V. Tags: Through Hole. More details for IPB35N12S3L-26 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB35N12S3L-26
  • Manufacturer
    Infineon Technologies
  • Description
    120 - 300 V, N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25 to 35 A
  • Drain Source Resistance
    20.3 to 32.2 Mohms
  • Drain Source Breakdown Voltage
    120 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2.4 V
  • Gate Charge
    30 to 39 nC
  • Power Dissipation
    71 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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