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IPB50N10S3L-16

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IPB50N10S3L-16 Image

The IPB50N10S3L-16 from Infineon Technologies is a MOSFET with Continous Drain Current 37 to 50 A, Drain Source Resistance 12.8 to 20.9 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2.4 V. Tags: Through Hole. More details for IPB50N10S3L-16 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB50N10S3L-16
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    37 to 50 A
  • Drain Source Resistance
    12.8 to 20.9 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2.4 V
  • Gate Charge
    49 to 64 nC
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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