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IPB60R099CPA

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IPB60R099CPA Image

The IPB60R099CPA from Infineon Technologies is a MOSFET with Continous Drain Current 19 to 31 A, Drain Source Resistance 0.09 to 0.105 Mohms, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPB60R099CPA can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB60R099CPA
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19 to 31 A
  • Drain Source Resistance
    0.09 to 0.105 Mohms
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    60 to 80 nC
  • Power Dissipation
    255 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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