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IPB60R199CPA

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IPB60R199CPA Image

The IPB60R199CPA from Infineon Technologies is a MOSFET with Continous Drain Current 10 to 16 A, Drain Source Resistance 0.18 to 0.199 Mohms, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for IPB60R199CPA can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB60R199CPA
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 to 16 A
  • Drain Source Resistance
    0.18 to 0.199 Mohms
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    32 to 43 nC
  • Power Dissipation
    139 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3
  • Applications
    Automotive

Technical Documents
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