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IPB64N25S3-20

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IPB64N25S3-20 Image

The IPB64N25S3-20 from Infineon Technologies is a MOSFET with Continous Drain Current 46 to 64 A, Drain Source Resistance 17.5 to 20 Mohms, Drain Source Breakdown Voltage 250 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IPB64N25S3-20 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB64N25S3-20
  • Manufacturer
    Infineon Technologies
  • Description
    120 - 300 V, N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    46 to 64 A
  • Drain Source Resistance
    17.5 to 20 Mohms
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    67 to 89 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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