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IPB65R065C7

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IPB65R065C7 Image

The IPB65R065C7 from Infineon Technologies is a MOSFET with Continous Drain Current 21 to 33 A, Drain Source Resistance 0.058 to 0.138 Mohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for IPB65R065C7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB65R065C7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    21 to 33 A
  • Drain Source Resistance
    0.058 to 0.138 Mohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    64 nC
  • Power Dissipation
    171 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 263
  • Applications
    PFC stages and PWM stages(TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UP Sand Solar.

Technical Documents
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