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IPB65R090CFD7

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IPB65R090CFD7 Image

The IPB65R090CFD7 from Infineon Technologies is a MOSFET with Continous Drain Current 16 to 25 A, Drain Source Resistance 0.068 to 0.150 Mohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPB65R090CFD7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB65R090CFD7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16 to 25 A
  • Drain Source Resistance
    0.068 to 0.150 Mohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    53 nC
  • Power Dissipation
    127 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 263-3
  • Applications
    Suiteable for Soft Switching topologies, Optimized for phase-shift full-bridge(ZVS), LLC Applications Server, Telecom, EV Charging

Technical Documents
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