The IPB65R090CFD7 from Infineon Technologies is a MOSFET with Continous Drain Current 16 to 25 A, Drain Source Resistance 0.068 to 0.150 Mohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPB65R090CFD7 can be seen below.