1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IPB65R095C7

IPB65R095C7

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IPB65R095C7 Image

The IPB65R095C7 from Infineon Technologies is a MOSFET with Continous Drain Current 15 to 24 A, Drain Source Resistance 0.084 to 0.202 Mohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for IPB65R095C7 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPB65R095C7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15 to 24 A
  • Drain Source Resistance
    0.084 to 0.202 Mohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    45 nC
  • Power Dissipation
    128 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 263
  • Applications
    PFC stages and PWM stages(TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UP Sand Solar.

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products