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IPB65R125C7

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IPB65R125C7 Image

The IPB65R125C7 from Infineon Technologies is a MOSFET with Continous Drain Current 12 to 18 A, Drain Source Resistance 0.111 to 0.265 Mohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for IPB65R125C7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB65R125C7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 to 18 A
  • Drain Source Resistance
    0.111 to 0.265 Mohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    35 nC
  • Power Dissipation
    101 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 263
  • Applications
    PFC stages and PWM stages(TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UP Sand Solar.

Technical Documents
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