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IPB65R190CFD

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IPB65R190CFD Image

The IPB65R190CFD from Infineon Technologies is a MOSFET with Continous Drain Current 11 to 17.5 A, Drain Source Resistance 0.171 to 0.445 Mohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPB65R190CFD can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB65R190CFD
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 to 17.5 A
  • Drain Source Resistance
    0.171 to 0.445 Mohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    68 nC
  • Power Dissipation
    151 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 263

Technical Documents
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