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IPB70N10SL-16

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IPB70N10SL-16 Image

The IPB70N10SL-16 from Infineon Technologies is a MOSFET with Continous Drain Current 50 to 70 A, Drain Source Resistance 14 to 25 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Through Hole. More details for IPB70N10SL-16 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB70N10SL-16
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 to 70 A
  • Drain Source Resistance
    14 to 25 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    160 to 240 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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