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IPB77N06S2-12

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The IPB77N06S2-12 from Infineon Technologies is a MOSFET with Continous Drain Current 56 to 77 A, Drain Source Resistance 9.5 to 12 Mohms, Drain Source Breakdown Voltage 55 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.1 to 4 V. Tags: Through Hole. More details for IPB77N06S2-12 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB77N06S2-12
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    56 to 77 A
  • Drain Source Resistance
    9.5 to 12 Mohms
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.1 to 4 V
  • Gate Charge
    45 to 60 nC
  • Power Dissipation
    158 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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