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IPB80N04S2-H4

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IPB80N04S2-H4 Image

The IPB80N04S2-H4 from Infineon Technologies is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 3.2 to 4 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.1 to 4 V. Tags: Through Hole. More details for IPB80N04S2-H4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB80N04S2-H4
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    3.2 to 4 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.1 to 4 V
  • Gate Charge
    103 to 148 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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