The IPB80N04S4L-04 from Infineon Technologies is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 3.4 to 6 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for IPB80N04S4L-04 can be seen below.