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IPB80N06S4-05

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The IPB80N06S4-05 from Infineon Technologies is a MOSFET with Continous Drain Current 75 to 80 A, Drain Source Resistance 4.4 to 5.7 Mohms, Drain Source Breakdown Voltage 60 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IPB80N06S4-05 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB80N06S4-05
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    75 to 80 A
  • Drain Source Resistance
    4.4 to 5.7 Mohms
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    62 to 81 nC
  • Power Dissipation
    107 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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