The IPB95R310PFD7 from Infineon Technologies is an N-Channel Enhancement Mode Power MOSFET that is ideal for hard and soft switching topologies, LLC and ZVS topologies, PFC and LLC in lighting and industrial SMPS applications. It has a drain-source breakdown voltage of over 950 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 0.31 ohms. This JEDEC-qualified MOSFET has a continuous drain current of up to 17.5 A and a power dissipation of less than 125 W. It is designed to set a new benchmark for super-junction (SJ) technologies and addresses various SMPS applications by combining best-in-class performance with state-of-the-art ease of usage. This MOSFET integrates an ultra-fast body diode that ensures the market’s lowest reverse recovery charge.

The IPB95R310PFD7 delivers increased power density, excellent hard commutation robustness, extra safety margin, and improved full-load efficiency, thereby providing price competitiveness against the earlier CoolMOS families. This RoHS-compliant MOSFET is available in a surface-mount package that measures 9.8 x 8.51 mm.