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IPC100N04S5-1R9

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IPC100N04S5-1R9 Image

The IPC100N04S5-1R9 from Infineon Technologies is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 1.6 to 2.3 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.2 to 3.4 V. Tags: Surface Mount. More details for IPC100N04S5-1R9 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPC100N04S5-1R9
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    1.6 to 2.3 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.2 to 3.4 V
  • Gate Charge
    50 to 65 nC
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8-34
  • Applications
    Automotive

Technical Documents
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