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IPD100N04S4L-02

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The IPD100N04S4L-02 from Infineon Technologies is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 1.6 to 2.5 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for IPD100N04S4L-02 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD100N04S4L-02
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    1.6 to 2.5 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    126 to 165 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TO252-3-313
  • Applications
    Automotive

Technical Documents
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